Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation
Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation
Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation
Strokan, N. B. (Autor:in) / Ivanov, A. M. (Autor:in) / Savkina, N. S. (Autor:in) / Lebedev, A. A. (Autor:in) / Kozlovski, V. V. (Autor:in) / Syvajarvi, M. (Autor:in) / Yakimova, R. (Autor:in) / Nipoti, R. / Poggi, A. / Scorzoni, A.
Silicon Carbide and Related Materials 2004 ; 1025-1028
MATERIALS SCIENCE FORUM ; 483/485
01.01.2005
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-Ray Detectors
British Library Online Contents | 2011
|N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle Detectors
British Library Online Contents | 2002
|Proton Irradiation Induced Defects in 4H-SiC
British Library Online Contents | 2001
|Field Investigation of Residential Smoke Detectors
NTIS | 1976
|Ferromagnetic Spots in Graphite Produced by Proton Irradiation
British Library Online Contents | 2003
|