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Low-temperature processable inherently photosensitive polyimide gate dielectric for organic thin-film transistors: Synthesis, characterization, and application to transistors
Low-temperature processable inherently photosensitive polyimide gate dielectric for organic thin-film transistors: Synthesis, characterization, and application to transistors
Low-temperature processable inherently photosensitive polyimide gate dielectric for organic thin-film transistors: Synthesis, characterization, and application to transistors
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 20 ; 931-939
01.01.2005
9 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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