Change in polarity of zinc oxide films grown on sapphire substrates without insertion of any buffer layer

Adachi, Y. / Ohashi, N. / Ohnishi, T. et al. | British Library Online Contents | 2008

Direct Observation of Inversion Domain Boundaries of GaN on c-Sapphire at Sub-angstrom Resolution

Liu, F. / Collazo, R. / Mita, S. et al. | British Library Online Contents | 2008

Growth and characterization of periodically polarity-inverted ZnO structures on sapphire substrates

Park, J. / Yao, T. | British Library Online Contents | 2012

Precipitates in GaN epilayers grown on sapphire substrates

Kang, J. / Ogawa, T. | British Library Online Contents | 1998

The role of inversion domain boundaries in fabricating crack-free GaN films on sapphire substrates by hydride vapor phase epitaxy

Ahn, Y. N. / Lee, S. H. / Lim, S. K. et al. | British Library Online Contents | 2015