Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers
Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers
Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers
Kim, M. D. (Autor:in) / Kim, T. W. (Autor:in)
JOURNAL OF MATERIALS SCIENCE ; 40 ; 5533-5535
01.01.2005
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates
| British Library Online Contents | 2001
Caracterization of AIN buffer layers on (0001)-sapphire substrates
| British Library Online Contents | 1997
Epitaxial LiNbO~3 thin films on sapphire substrates grown by solid source MOCVD
| British Library Online Contents | 1994
Epitaxial ZnO films grown on ZnO-buffered c-plane sapphire substrates by hydrothermal method
| British Library Online Contents | 2010
Quality-enhanced AlN epitaxial films grown on c-sapphire using ZnO buffer layer for SAW applications
| British Library Online Contents | 2017