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Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates
Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates
Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates
Feng, Z. C. (Autor:in) / Yang, T. R. (Autor:in) / Hou, Y. T. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 4 ; 571-576
01.01.2001
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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