Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Non-equilibrium defects in aluminum-doped zinc oxide thin films grown with a pulsed laser deposition method
Non-equilibrium defects in aluminum-doped zinc oxide thin films grown with a pulsed laser deposition method
Non-equilibrium defects in aluminum-doped zinc oxide thin films grown with a pulsed laser deposition method
Ryoken, H. (Autor:in) / Sakaguchi, I. (Autor:in) / Ohashi, N. (Autor:in) / Sekiguchi, T. (Autor:in) / Hishita, S. (Autor:in) / Haneda, H. (Autor:in)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 20 ; 2866-2872
01.01.2005
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Aluminum nitride thin films grown by plasma-assisted pulsed laser deposition
British Library Online Contents | 1997
|Advanced functional oxide thin films grown by pulsed-laser deposition
British Library Online Contents | 2013
|Optical and electrical properties of aluminum-doped ZnO thin films grown by pulsed laser deposition
British Library Online Contents | 2007
|Thin tantalum and tantalum oxide films grown by pulsed laser deposition
British Library Online Contents | 2000
|Deposition of zinc oxide thin films by reactive pulsed laser ablation
British Library Online Contents | 2006
|