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Low electrical resistivity polycrystalline SiGe films obtained by vertical LPCVD for MOS devices
Low electrical resistivity polycrystalline SiGe films obtained by vertical LPCVD for MOS devices
Low electrical resistivity polycrystalline SiGe films obtained by vertical LPCVD for MOS devices
Teixeira, R. C. (Autor:in) / Doi, I. (Autor:in) / Zakia, M. B. (Autor:in) / Diniz, J. A. (Autor:in) / Swart, J. W. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 138-142
01.01.2005
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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