Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Ab initio study of electronic properties in polymorphs of compound Ti3SiC2 and Ti3GeC2
MATERIALS LETTERS ; 60 ; 538-540
01.01.2006
3 pages
Aufsatz (Zeitschrift)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Native point defects in Ti3GeC2 and Ti2GeC
British Library Online Contents | 2017
|Polycarbosilane derived Ti3SiC2
British Library Online Contents | 2008
|British Library Online Contents | 2016
|British Library Online Contents | 2016
|British Library Online Contents | 2016
|