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    Ab initio study of electronic properties in polymorphs of compound Ti3SiC2 and Ti3GeC2

    New search for: Lv, M.
    New search for: Chen, Z.
    New search for: Liu, R.

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    Ab initio study of electronic properties in polymorphs of compound Ti3SiC2 and Ti3GeC2

    New search for: Lv, M.
    New search for: Chen, Z.
    New search for: Liu, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Ab initio study of electronic properties in polymorphs of compound Ti3SiC2 and Ti3GeC2

    New search for: Lv, M.
    New search for: Chen, Z.
    New search for: Liu, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Ab initio study of electronic properties in polymorphs of compound Ti3SiC2 and Ti3GeC2

    Contributors:

    Lv, M. (author) / Chen, Z. (author) / Liu, R. (author)

    Published in:

    MATERIALS LETTERS ; 60 ; 538-540

    Publication date:

    2006-01-01

    Size:

    3 pages

    ISSN:

    0167-577X

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.1105 / 530

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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