Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Diffusion Behavior at the Interface of (Ba,Sr)TiO~3(BST)/Electrode/Buffer Layer/Si Epitaxial Multi-Layer Thin Film
Diffusion Behavior at the Interface of (Ba,Sr)TiO~3(BST)/Electrode/Buffer Layer/Si Epitaxial Multi-Layer Thin Film
Diffusion Behavior at the Interface of (Ba,Sr)TiO~3(BST)/Electrode/Buffer Layer/Si Epitaxial Multi-Layer Thin Film
Wakiya, N. (Autor:in) / Higuchi, A. (Autor:in) / Ryouken, H. (Autor:in) / Haneda, H. (Autor:in) / Fukunaga, K. (Autor:in) / Shibata, N. (Autor:in) / Suzuki, T. (Autor:in) / Nishi, Y. (Autor:in) / Shinozaki, K. (Autor:in) / Mizutani, N. (Autor:in)
KEY ENGINEERING MATERIALS ; 301 ; 257-260
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2011
|British Library Online Contents | 1994
|Epitaxial CoSi~2 formation using an oxynitride buffer layer
British Library Online Contents | 2009
|Room-temperature growth of ultrasmooth AIN epitaxial thin films on sapphire with NiO buffer layer
British Library Online Contents | 2004
|Epitaxial growth of YBCO thin films on LaAlO~3 substrate with CeO~2 buffer layer
British Library Online Contents | 1995
|