Novel In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors on GaAs substrate with InxGa1-xP graded buffer layers

Yuan, K. / Radhakrishnan, K. / Zheng, H. Q. et al. | British Library Online Contents | 2001

Phosphorous passivation of In0.53Ga0.47As using MOVPE and characterization of Au-Ga2O3(Gd2O3)-In0.53Ga0.47As MIS capacitor

Pal, S. / Shivaprasad, S. M. / Aparna, Y. et al. | British Library Online Contents | 2005

Magnetotransport measurements and electric subbands in an Al~xGa~1~-~xAs(x = 0.3)/GaAs one-side-modulation-doped quantum well

Kim, T. W. / Lee, J. H. / Park, H. L. | British Library Online Contents | 1993

Giant magnetotransport and magnetostructural phenomena in hole-doped manganese oxides

Tokura, T. / Urushibara, A. / Moritomo, Y. et al. | British Library Online Contents | 1995

Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As

Brennan, B. / Milojevic, M. / Hinkle, C. L. et al. | British Library Online Contents | 2011