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Novel In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors on GaAs substrate with InxGa1-xP graded buffer layers
Novel In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors on GaAs substrate with InxGa1-xP graded buffer layers
Novel In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors on GaAs substrate with InxGa1-xP graded buffer layers
Yuan, K. (Autor:in) / Radhakrishnan, K. (Autor:in) / Zheng, H. Q. (Autor:in) / Yoon, S. F. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 4 ; 641-645
01.01.2001
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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|Single crystal growth of compositionally graded InXGa1-XAs
British Library Online Contents | 2000
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