Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals
Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals
Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals
Goksen, K. (Autor:in) / Gasanly, N. M. (Autor:in) / Seyhan, A. (Autor:in) / Turan, R. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 127 ; 41-46
01.01.2006
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals
British Library Online Contents | 2001
|Temperature Dependent Photoluminescence of ZnO Single Crystals
British Library Online Contents | 2010
|Excitation- and power-dependent photoluminescence from oxidized Ge
British Library Online Contents | 2013
|Excitation-dependent photoluminescence of ZnO microrods with MgO surface coating
British Library Online Contents | 2012
|Excitation energy-dependent photoluminescence behavior in Zn"2SiO"4:Mn phosphors
British Library Online Contents | 1999
|