A platform for research: civil engineering, architecture and urbanism
Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals
Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals
Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals
Goksen, K. (author) / Gasanly, N. M. (author) / Seyhan, A. (author) / Turan, R. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 127 ; 41-46
2006-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals
British Library Online Contents | 2001
|Temperature Dependent Photoluminescence of ZnO Single Crystals
British Library Online Contents | 2010
|Excitation- and power-dependent photoluminescence from oxidized Ge
British Library Online Contents | 2013
|Excitation-dependent photoluminescence of ZnO microrods with MgO surface coating
British Library Online Contents | 2012
|Excitation-dependent photoluminescence from WS2 nanostructures synthesized via top-down approach
British Library Online Contents | 2017
|