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Crystallinity Studies of GaN/Si Films Grown by MOCVD at Various Substrate Temperatures Using XRD
Crystallinity Studies of GaN/Si Films Grown by MOCVD at Various Substrate Temperatures Using XRD
Crystallinity Studies of GaN/Si Films Grown by MOCVD at Various Substrate Temperatures Using XRD
Ng, S. S. (Autor:in) / Hassan, Z. (Autor:in) / Hassan, H. A. (Autor:in) / Kordesch, M. E. (Autor:in)
MATERIALS SCIENCE FORUM ; 517 ; 69-72
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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