Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height

Kinoshita, A. / Ohyanagi, T. / Yatsuo, T. et al. | British Library Online Contents | 2010

Electrical transport characteristics of Au/n-GaN Schottky diodes

Benamara, Z. / Akkal, B. / Talbi, A. et al. | British Library Online Contents | 2006

Effect of Surface Preparation and Thermal Anneal on Electrical Characteristics of 4H-SiC Schottky Barrier Diodes

Alok, D. / Egloff, R. / Arnold, E. | British Library Online Contents | 1998

Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC

Naretto, M. / Perrone, D. / Ferrero, S. et al. | British Library Online Contents | 2010

Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes

Ayyildiz, E. / Cetin, H. / Horvath, Z. J. | British Library Online Contents | 2005