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Dependence of the Ionization Energy of Phosphorus Donor in 4H-SiC on Doping Concentration
Dependence of the Ionization Energy of Phosphorus Donor in 4H-SiC on Doping Concentration
Dependence of the Ionization Energy of Phosphorus Donor in 4H-SiC on Doping Concentration
Rao, S. (Autor:in) / Chow, T. P. (Autor:in) / Bhat, I. B. (Autor:in) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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