Dependence of the Ionization Energy of Phosphorus Donor in 4H-SiC on Doping Concentration: Fid-Bau Portal

Dependence of the Ionization Energy of Phosphorus Donor in 4H-SiC on Doping Concentration

Rao, S. / Chow, T. P. / Bhat, I. B.

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Dependence of the Ionization Energy of Phosphorus Donor in 4H-SiC on Doping Concentration

Rao, S. / Chow, T. P. / Bhat, I. B.

Dependence of the Ionization Energy of Phosphorus Donor in 4H-SiC on Doping Concentration

Rao, S. / Chow, T. P. / Bhat, I. B.

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Title:

Dependence of the Ionization Energy of Phosphorus Donor in 4H-SiC on Doping Concentration

Contributors:

Rao, S. (author) / Chow, T. P. (author) / Bhat, I. B. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

Published in:

Silicon Carbide and Related Materials - 2005 ; 597-600

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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