Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films
Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films
Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films
MATERIALS LETTERS ; 61 ; 3867-3869
01.01.2007
3 pages
Aufsatz (Zeitschrift)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2008
|British Library Online Contents | 2007
|British Library Online Contents | 2010
|British Library Online Contents | 2006
|Synthesis of GaN nanorods by ammoniating Ga2O3 films on In2O3 layer deposited on Si (111) substrates
British Library Online Contents | 2008
|