Photosensitivity in GeO2–SiO2 glasses and optical waveguides

Zhang, L. / Zhang, H. / Wang, J. et al. | British Library Online Contents | 2006

Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates

Lucovsky, G. / Lee, S. / Long, J. P. et al. | British Library Online Contents | 2008

Effect of GeO2 content on upconversion luminescence of Er3+-doped PbF2-SiO2-GeO2 glasses

Ma, H. / Xu, S. | British Library Online Contents | 2006

Structural and optical properties of Er^3^+ doped SiO2-Al2O3-GeO2 compounds prepared by a simple route

Filho, F. M. / Goncalves, R. R. / Ribeiro, S. J. et al. | British Library Online Contents | 2015

Band structures for Ge3N4 polymorphs studied by DFT-LDA and GWA

Gao, S. P. / Cai, G. / Xu, Y. | British Library Online Contents | 2013