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Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates
Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates
Elimination of GeO2 and Ge3N4 interfacial transition regions and defects at n-type Ge interfaces: A pathway for formation of n-MOS devices on Ge substrates
Lucovsky, G. (Autor:in) / Lee, S. (Autor:in) / Long, J. P. (Autor:in) / Seo, H. (Autor:in) / Luning, J. (Autor:in)
APPLIED SURFACE SCIENCE ; 254 ; 7933-7937
01.01.2008
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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