Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Analysis of materials modifications caused by UV laser micro drilling of via holes in AlGaN/GaN transistors on SiC
Analysis of materials modifications caused by UV laser micro drilling of via holes in AlGaN/GaN transistors on SiC
Analysis of materials modifications caused by UV laser micro drilling of via holes in AlGaN/GaN transistors on SiC
Wernicke, T. (Autor:in) / Kruger, O. (Autor:in) / Herms, M. (Autor:in) / Wurfl, J. (Autor:in) / Kirmse, H. (Autor:in) / Neumann, W. (Autor:in) / Behm, T. (Autor:in) / Irmer, G. (Autor:in) / Trankle, G. (Autor:in)
APPLIED SURFACE SCIENCE ; 253 ; 8008-8014
01.01.2007
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Analysis of surface and material modifications caused by laser drilling of AlN ceramics
British Library Online Contents | 2007
|The Downsizing Effects in EDM Drilling of Micro Holes
British Library Online Contents | 2013
|Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors
British Library Online Contents | 2009
|Engineering Index Backfile | 1927
|