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Selective Epitaxial Growth of 4H-SiC with SiO~2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method
Selective Epitaxial Growth of 4H-SiC with SiO~2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method
Selective Epitaxial Growth of 4H-SiC with SiO~2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method
Krishnan, B. (Autor:in) / Das, H. (Autor:in) / Lin, H. D. (Autor:in) / Koshka, Y. (Autor:in) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.
01.01.2007
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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