Selective Epitaxial Growth of 4H-SiC with SiO~2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method: Fid-Bau Portal

Selective Epitaxial Growth of 4H-SiC with SiO~2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method

Krishnan, B. / Das, H. / Lin, H. D. / Koshka, Y.

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Selective Epitaxial Growth of 4H-SiC with SiO~2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method

Krishnan, B. / Das, H. / Lin, H. D. / Koshka, Y.

Selective Epitaxial Growth of 4H-SiC with SiO~2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method

Krishnan, B. / Das, H. / Lin, H. D. / Koshka, Y.

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Order at Subito €

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Document information

Title:

Selective Epitaxial Growth of 4H-SiC with SiO~2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method

Contributors:

Krishnan, B. (author) / Das, H. (author) / Lin, H. D. (author) / Koshka, Y. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.

Published in:

Silicon Carbide and Related Materials 2006 ; 149-152

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Chindanon, K. / Lin, H.D. / Melnychuk, G. et al. | British Library Online Contents | 2009

Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth

Das, H. / Melnychuk, G. / Koshka, Y. | British Library Online Contents | 2009

Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive

Lin, H. D. / Melnychuk, G. / Wyatt, J. L. et al. | British Library Online Contents | 2007

Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method

Das, H. / Krishnan, B. / Melnychuk, G. et al. | British Library Online Contents | 2009

4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method

Krishnan, B. / Merrett, N. / Melnychuk, G. et al. | British Library Online Contents | 2010