Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC
Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC
Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC
Syvajarvi, M. (Autor:in) / Sritirawisarn, N. (Autor:in) / Yakimova, R. (Autor:in) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.
01.01.2007
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
High Growth Rate of -SIC by Sublimation Epitaxy
British Library Online Contents | 1998
|Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy
British Library Online Contents | 2002
|Growth of p-Type SiC Layer by Sublimation Epitaxy
British Library Online Contents | 2003
|SiC Heteropolytype Structures Grown by Sublimation Epitaxy
British Library Online Contents | 2007
|Properties of AlN Layers Grown by Sublimation Epitaxy
British Library Online Contents | 2003
|