Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Trends in Dopant Incorporation for 3C-SiC Films on Silicon
Trends in Dopant Incorporation for 3C-SiC Films on Silicon
Trends in Dopant Incorporation for 3C-SiC Films on Silicon
Zielinski, M. (Autor:in) / Portail, M. (Autor:in) / Peyre, H. (Autor:in) / Chassagne, T. (Autor:in) / Ndiaye, S. (Autor:in) / Boyer, B. (Autor:in) / Leycuras, A. (Autor:in) / Camassel, J. (Autor:in) / Wright, N. / Johnson, C. M.
01.01.2007
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Nitrogen incorporation in ZnO nanowires using N2O dopant gas
British Library Online Contents | 2013
|Shallow boron dopant on silicon
British Library Online Contents | 2004
|Dopant effect on in situ doped metal-induced lateral crystallization of amorphous silicon films
British Library Online Contents | 2005
|Enhanced Dopant Diffusion Effects in 4H Silicon Carbide
British Library Online Contents | 2002
|British Library Online Contents | 1998
|