6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction: Fid-Bau Portal

6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction

Stockmeier, M. / Hock, R. / Filip, O. / Epelbaum, B. M. / Winnacker, A. / Magerl, A.

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6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction

Stockmeier, M. / Hock, R. / Filip, O. / Epelbaum, B. M. / Winnacker, A. / Magerl, A.

6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction

Stockmeier, M. / Hock, R. / Filip, O. / Epelbaum, B. M. / Winnacker, A. / Magerl, A.

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Titel:

6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction

Beteiligte:

Stockmeier, M. (Autor:in) / Hock, R. (Autor:in) / Filip, O. (Autor:in) / Epelbaum, B. M. (Autor:in) / Winnacker, A. (Autor:in) / Magerl, A. (Autor:in) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I.

Erschienen in:

Silicon Carbide and Related Materials 2006 ; 219-222

MATERIALS SCIENCE FORUM ; 556/557

Erscheinungsdatum:

01.01.2007

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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