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A Case for High Temperature, High Voltage SiC Bipolar Devices
A Case for High Temperature, High Voltage SiC Bipolar Devices
A Case for High Temperature, High Voltage SiC Bipolar Devices
Agarwal, A. (Autor:in) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.
01.01.2007
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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