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Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C–SiC nanocrystals in the oxide
Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C–SiC nanocrystals in the oxide
Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C–SiC nanocrystals in the oxide
Pongrácz, A. (Autor:in) / Battistig, G. (Autor:in) / Dücső, C. (Autor:in) / Josepovits, K. V. (Autor:in) / Deák, P. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -AMSTERDAM THEN LAUSANNE- C ; 27 ; 1444-1447
01.01.2007
4 pages
Aufsatz (Zeitschrift)
Englisch
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