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    Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C–SiC nanocrystals in the oxide

    New search for: Pongrácz, A.
    New search for: Battistig, G.
    New search for: Dücső, C.
    New search for: Josepovits, K. V.
    New search for: Deák, P.

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    Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C–SiC nanocrystals in the oxide

    New search for: Pongrácz, A.
    New search for: Battistig, G.
    New search for: Dücső, C.
    New search for: Josepovits, K. V.
    New search for: Deák, P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C–SiC nanocrystals in the oxide

    New search for: Pongrácz, A.
    New search for: Battistig, G.
    New search for: Dücső, C.
    New search for: Josepovits, K. V.
    New search for: Deák, P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C–SiC nanocrystals in the oxide

    Contributors:

    Pongrácz, A. (author) / Battistig, G. (author) / Dücső, C. (author) / Josepovits, K. V. (author) / Deák, P. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -AMSTERDAM THEN LAUSANNE- C ; 27 ; 1444-1447

    Publication date:

    2007-01-01

    Size:

    4 pages

    ISSN:

    0928-4931

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.1 / 660

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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