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Unusual changes observed in the photoluminescence of annealed InxGa1−xN/GaN quantum wells explained
Unusual changes observed in the photoluminescence of annealed InxGa1−xN/GaN quantum wells explained
Unusual changes observed in the photoluminescence of annealed InxGa1−xN/GaN quantum wells explained
Biswas, D. (Autor:in) / Kumar, S. (Autor:in) / Das, T. (Autor:in)
MATERIALS LETTERS ; 61 ; 5282-5284
01.01.2007
3 pages
Aufsatz (Zeitschrift)
Englisch
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