Atomic arrangements of a CuAu-I type ordered structure in strained InxGa1 − xAs/InyAl1 − yAs multiple quantum wells

Lee, D. U. / Jin, J. Y. / Yun, T. Y. et al. | British Library Online Contents | 2005

Dependence of the interband transitions on the in mole fraction and the applied electric field in InxGa1-xAs/In0.52Al0.48As multiple quantum wells

Kim, J. H. / Woo, J. T. / Lee, I. et al. | British Library Online Contents | 2005

Misfit dislocations and radiative efficiency of InxGa1-xN/GaN quantum wells

Rebane, Y. T. / Shreter, Y. G. / Wang, W. N. | British Library Online Contents | 2000

Interband transition studies of one-side modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric step quantum wells

Jung, M. / Kim, T. W. / Lee, D. U. et al. | British Library Online Contents | 2002

Unusual changes observed in the photoluminescence of annealed InxGa1−xN/GaN quantum wells explained

Biswas, D. / Kumar, S. / Das, T. | British Library Online Contents | 2007