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Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics
Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics
Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics
Ono, Y. (Autor:in) / Khalafalla, M. A. (Autor:in) / Nishiguchi, K. (Autor:in) / Takashina, K. (Autor:in) / Fujiwara, A. (Autor:in) / Horiguchi, S. (Autor:in) / Inokawa, H. (Autor:in) / Takahashi, Y. (Autor:in)
APPLIED SURFACE SCIENCE ; 254 ; 6252-6256
01.01.2008
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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