Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond
Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond
Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond
Teraji, T. (Autor:in) / Koizumi, S. (Autor:in) / Koide, Y. (Autor:in) / Ito, T. (Autor:in)
APPLIED SURFACE SCIENCE ; 254 ; 6273-6276
01.01.2008
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes
British Library Online Contents | 2011
|Field emission characteristics of phosphorus-doped homoepitaxial diamond films
British Library Online Contents | 1999
|Diamond Schottky barrier diodes with floating metal rings for high breakdown voltage
British Library Online Contents | 2019
|British Library Online Contents | 2000
|Multiphase surface morphologies of doped homoepitaxial diamond films
British Library Online Contents | 1994
|