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The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes
The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes
The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes
Tompkins, R.P. (Autor:in) / Walsh, T.A. (Autor:in) / Derenge, M.A. (Autor:in) / Kirchner, K.W. (Autor:in) / Zhou, S. (Autor:in) / Nguyen, C.B. (Autor:in) / Jones, K.A. (Autor:in) / Suvarna, P. (Autor:in) / Tungare, M. (Autor:in) / Tripathi, N. (Autor:in)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 26 ; 2895-2900
01.01.2011
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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