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Controlling energy deposition during the C60+ bombardment of silicon: The effect of incident angle geometry
Controlling energy deposition during the C60+ bombardment of silicon: The effect of incident angle geometry
Controlling energy deposition during the C60+ bombardment of silicon: The effect of incident angle geometry
Kozole, J. (Autor:in) / Winograd, N. (Autor:in)
APPLIED SURFACE SCIENCE ; 255 ; 886-889
01.01.2008
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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