Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Study of silicon-germanium interdiffusion from pure germanium deposited layers
Study of silicon-germanium interdiffusion from pure germanium deposited layers
Study of silicon-germanium interdiffusion from pure germanium deposited layers
Gavelle, M. (Autor:in) / Bazizi, E. M. (Autor:in) / Scheid, E. (Autor:in) / Armand, C. (Autor:in) / Fazzini, P. F. (Autor:in) / Marcelot, O. (Autor:in) / Campidelli, Y. (Autor:in) / Halimaoui, A. (Autor:in) / Cristiano, F. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 154-155 ; 110-113
01.01.2008
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Silicon germanium interdiffusion in SiGe device fabrication: A calibrated TCAD model
British Library Online Contents | 2016
|Phosphorous clustering in germanium-rich silicon germanium
British Library Online Contents | 2008
|Copper Species in Ultra-Pure Germanium Crystals
British Library Online Contents | 1995
|Transport in silicon/germanium nanostructures
British Library Online Contents | 1996
|White luminescence emission from silicon implanted germanium
British Library Online Contents | 2018
|