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Silicon germanium interdiffusion in SiGe device fabrication: A calibrated TCAD model
Silicon germanium interdiffusion in SiGe device fabrication: A calibrated TCAD model
Silicon germanium interdiffusion in SiGe device fabrication: A calibrated TCAD model
Zechner, Christoph (Autor:in) / Zographos, Nikolas (Autor:in)
Materials science in semiconductor processing ; 42 ; 230-234
01.01.2016
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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