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Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals
Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals
Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals
Filip, O. (Autor:in) / Epelbaum, B.M. (Autor:in) / Li, J. (Autor:in) / Bickermann, M. (Autor:in) / Xu, X.G. (Autor:in) / Winnacker, A. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 23-26
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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