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    Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals

    New search for: Filip, O.
    New search for: Epelbaum, B.M.
    New search for: Li, J.
    New search for: Bickermann, M.
    New search for: Xu, X.G.
    New search for: Winnacker, A.

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    Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals

    New search for: Filip, O.
    New search for: Epelbaum, B.M.
    New search for: Li, J.
    New search for: Bickermann, M.
    New search for: Xu, X.G.
    New search for: Winnacker, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals

    New search for: Filip, O.
    New search for: Epelbaum, B.M.
    New search for: Li, J.
    New search for: Bickermann, M.
    New search for: Xu, X.G.
    New search for: Winnacker, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals

    Contributors:

    Filip, O. (author) / Epelbaum, B.M. (author) / Li, J. (author) / Bickermann, M. (author) / Xu, X.G. (author) / Winnacker, A. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 600/603 ; 23-26

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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