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Strain in 3C-SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates
Strain in 3C-SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates
Strain in 3C-SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates
Zielinski, M. (Autor:in) / Portail, M. (Autor:in) / Chassagne, T. (Autor:in) / Cordier, Y. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 207-210
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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