Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC
Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC
Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC
Camarda, M. (Autor:in) / La Magna, A. (Autor:in) / Severino, A. (Autor:in) / La Via, F. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 117-120
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2001
|Step bunching in potassium dihydrogen phosphate crystal growth: Phenomenology
British Library Online Contents | 2002
|Energy barrier for the growth transition step-flow/step-bunching during epitaxy of InP/InP
British Library Online Contents | 2000
|Step bunching during the epitaxial growth of a generic binary-compound thin film
British Library Online Contents | 2010
|Bi induced step-flow growth in the homoepitaxial growth of Au(111)
British Library Online Contents | 2005
|