Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC: Fid-Bau Portal

Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC

Camarda, M. / La Magna, A. / Severino, A. / La Via, F.

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Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC

Camarda, M. / La Magna, A. / Severino, A. / La Via, F.

Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC

Camarda, M. / La Magna, A. / Severino, A. / La Via, F.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC

Contributors:

Camarda, M. (author) / La Magna, A. (author) / Severino, A. (author) / La Via, F. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 117-120

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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