Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping
Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping
Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping
Feng, G. (Autor:in) / Suda, J. (Autor:in) / Kimoto, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 245-250
01.01.2009
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Single Shockley Faults Enlargement during Micro-Photoluminescence Defects Mapping
British Library Online Contents | 2010
|Photoluminescence excitation spectroscopy of InGaN epilayers
British Library Online Contents | 2002
|Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
British Library Online Contents | 2011
|High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers
British Library Online Contents | 2012
|British Library Online Contents | 2012
|