Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping: Fid-Bau Portal

Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping

Feng, G. / Suda, J. / Kimoto, T.

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Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping

Feng, G. / Suda, J. / Kimoto, T.

Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping

Feng, G. / Suda, J. / Kimoto, T.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping

Contributors:

Feng, G. (author) / Suda, J. (author) / Kimoto, T. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 245-250

Publication date:

2009-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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