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Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography
Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography
Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography
Tanuma, R. (Autor:in) / Tamori, T. (Autor:in) / Yonezawa, Y. (Autor:in) / Yamaguchi, H. (Autor:in) / Matsuhata, H. (Autor:in) / Fukuda, K. (Autor:in) / Arai, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 251-254
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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