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A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth
A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth
A TEM Study of Inversion Domain Boundaries Annihilation Mechanism in 3C-SiC during Growth
Mantzari, A. (Autor:in) / Lioutas, C.B. (Autor:in) / Polychroniadis, E.K. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 331-334
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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