2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

Perez-Tomas, A. / Placidi, M. / Baron, N. et al. | British Library Online Contents | 2010

Interface Passivation for Silicon Dioxide Layers on Silicon Carbide

Dhar, S. / Wang, S. / Williams, J. R. et al. | British Library Online Contents | 2005

Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap

Cochrane, C.J. / Lenahan, P.M. / Lelis, A.J. | British Library Online Contents | 2012

Silicon Carbide-Silicon Dioxide Transition Layer Mobility

Salemi, S. / Akturk, A. / Potbhare, S. et al. | British Library Online Contents | 2012

100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules

Losee, P.A. / Matocha, K. / Arthur, S. et al. | British Library Online Contents | 2009