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Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction
Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction
Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction
Miyake, H. (Autor:in) / Kimoto, T. (Autor:in) / Suda, J. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 979-982
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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