Evolution of the Electrical Behaviour of GaN and AlGaN Materials after High Temperature Annealing and Thermal Oxidation

Roccaforte, F. / Iucolano, F. / Giannazzo, F. et al. | British Library Online Contents | 2010

4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments

Robert, J.-L. / Contreras, S. / Camassel, J. et al. | British Library Online Contents | 2002

Single layer graphene Hall sensors for scanning Hall probe microscopy (SHPM) in 3-300K temperature range

Sonusen, S. / Karci, O. / Dede, M. et al. | British Library Online Contents | 2014

Quantitative Mobility Spectrum Analysis of AlGaN/GaN Heterostructures Using Variable-Field Hall Measurements

Biyikli, N. / Litton, C. W. / Xie, J. et al. | British Library Online Contents | 2006

AlGaN/GaN heterostructure-based surface acoustic wave-structures for chemical sensors

Lalinsky, T. / Rufer, L. / Vanko, G. et al. | British Library Online Contents | 2008